ace 1 4201t p- channel enhancement mode power mosfet ver 1. 1 1 description the ACE14201T uses advanced trench technology and desgin to provide excellent r ds(on) with low gate charge. it can be used in a wide variety of applications. features ? v ds (v) = - 20v i d = - 14a ? r ds(on) 8.5m (v gs = - 4.5v) ? r ds(on) 12m (v gs = - 2.5v) ? r ds(on) 17m (v gs = - 1.8v) absolute maximum ratings @t a =25 unless otherwise noted parameter symbol max unit drain - source voltage v dss - 2 0 v gate - source voltage v gss 12 v drain current ( continuous ) *ac t a =25 i d - 14 a t a = 100 - 8.8 drain current ( pulsed ) *b i dm - 56 a avalanche energy l=0.1mh e as , e ar 22 mj power dissipation t a =25 p d 2 w operating temperature / storage temperature t j /t stg - 55~150 thermal resistance ,junction - to - ambient* r ja 62 /w a: the value of r j a is measured wi th the device mounted on 1in2 fr - 4 board with 2oz. copper, in a still air environment with t a =25c. the value in any given application depends on the user's specific board design. b: repetitive rating, pulse width limited by junction temperature. c: the cu rrent rating is based on the t 10s junction to ambient thermal resistance rating. packaging type sop - 8
ace 1 4201t p- channel enhancement mode power mosfet ver 1. 1 2 ordering i nformation ACE14201T x x + h electrical characteristics t a =25 , unless otherwise specified. parameter symbol test condi tions min typ max unit static drain - source breakdown voltage v (br)dss v gs =0 v, i d = - 250a - 20 v zero gate voltage drain current i dss v ds = - 20 v, v gs =0v - 1 a gate threshold voltage v gs(th) v gs =v ds , i ds = - 250a - 0.3 - 0.6 v gate leakage current i gss v gs = 12 v, v ds =0v 100 na drain - source on - state resistance r ds(on) v gs = - 4.5 v, i d = - 8 a 6.5 m v gs = - 2 .5v, i d = - 5 a 9 v gs = - 1.8 v, i d = - 3 a 12 forward trans conductance g fs v ds = - 10 v, i d = - 5 a 20 s diode forward voltage v sd i sd = - 1 a, v gs =0v - 1.2 v switching total gate charge qg v gs = - 4.5 v, v ds = - 10 v, i d = - 5 a 44.4 nc gate - source charge qg s 7.2 gate - drain charge qgd 10.2 turn - on delay time t d(on) v gs = - 10 v, v dd = - 15 v , i d = - 1a , r gen = 6 13.2 ns turn - on rise time tr 68 turn - off delay time t d(off) 160 turn - off fall time tf 154 dynamic input capacitance ciss v gs =0 v, v ds = - 15 v, f=1.0mhz 4060 pf output capacitance coss 520 reverse transfer capacitance crss 400 fm: sop - 8 pb - free halogen - free
ace 1 4201t p- channel enhancement mode power mosfet ver 1. 1 3 typi cal performance characteristics
ace 1 4201t p- channel enhancement mode power mosfet ver 1. 1 4
ace 1 4201t p- channel enhancement mode power mosfet ver 1. 1 5 packing informatio n sop - 8 symbol dimensions in millimeters dimensions in inches min max min max a 1.350 1.750 0.053 0.069 a1 0.100 0.250 0.004 0.010 a2 1.350 1.550 0.053 0.061 b 0.330 0.510 0.013 0.020 c 0.170 0.250 0.006 0.010 d 4.700 5.100 0.185 0.200 e 3.800 4.000 0.150 0.157 e1 5.800 6.200 0.228 0.244 e 1.270 (bsc) 0.050 (bsc) l 0.400 1.270 0.016 0.050 0 8 0 8
ace 1 4201t p- channel enhancement mode power mosfet ver 1. 1 6 notes ace does not assume any responsibility for use as critical components in life suppo rt devices or systems without the express written approval of the president and general counsel of ace electronics co., ltd. as sued herein: 1. life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, and shoes failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury to the user. 2. a critical component is any componen t of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. ace technology co., ltd. http://www.ace - ele.com/
|
